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 RF2381
0
RoHS Compliant & Pb-Free Product Typical Applications * CDMA PCS/Cellular Handsets * TDMA PCS/Cellular Handsets * W-CDMA Handsets
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER
Product Description
The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package.
1.80 1.40 .50 .35 3.10 2.70
.10 MAX.
TEXT *
1.90
3.00 2.60
1.30 1.00
.90 .70
9 1 All dimensions in mm.
.25 .10 .37 MIN.
*When Pin 1 is in upper left, text reads downward (as shown).
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOT23-6
Features * 50dB Linear Gain Control Range * 22dB Maximum Gain * Single 2.7V to 3.3V Supply * 35mA Supply Current * High Linearity
RF OUT 1 GND 2 GC 3 ATT ATT
6 VCC 5 GND 4 RF IN
Ordering Information
RF2381 PCS/Cellular TDMA/CDMA/W-CDMA Linear Variable Gain Amplifier RF2381PCBA-41X Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Functional Block Diagram
Rev A2 060907
4-449
RF2381
Absolute Maximum Ratings Parameter
Supply Voltage DC Current Operating Ambient Temperature Storage Temperature
Rating
0 to +5.0 100 -30 to +85 -40 to +150
Unit
VDC mA C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range Linear Gain Control Range Gain Control Slope Input VSWR Output VSWR Output IP3 Noise Figure
Specification Min. Typ. Max.
800 to 2100 50 70 1.5:1 1.5:1 +26 9 1880 20 +8 -9 -33 -61 2.5:1 2.5:1
Unit
MHz dB dB/V
Condition
VCC =2.8V, VGC =2.0V, T=25C
Over entire gain control range Over entire gain control range dBm dB MHz dB dBm dBm dBc dBc Maximum gain VCC =2.8V, VGC =2.0V, T=25C
+23
TDMA
Operating Frequency Maximum Small Signal Gain Maximum Average Output Power Maximum Average Input Power Adjacent Channel Power 18 22 -8 -32 -52
CDMA
Operating Frequency Maximum Small Signal Gain Maximum Average Output Power Maximum Average Input Power Adjacent Channel Power 18 1880 20 +6 -13 -53 22 MHz dB dBm dBm dBc
TDMA modulation; ACP<-32dBc TDMA modulation; for any VGC that gives POUT <+8dBm, ACP<-32dBc, ALT<-52dBc TDMA modulation; POUT <+8dBm and PIN <-11dBm, at all VGC. TDMA modulation; POUT <+8dBm and PIN <-11dBm, at all VGC. VCC =2.8V, VGC =2.0V, T=25C
W-CDMA
Operating Frequency Small Signal Gain Maximum Linear Output Power Adjacent Channel Power 17.5 1920 to 1980 19.5 +5 22 -46 -43 -43 MHz dB dBm dBc dBc dBc
CDMA modulation; VCC =3.0V, maximum gain setting, ACP<-52dBc. CDMA modulation; for any VGC that gives POUT <+6dBm, ACP<-52dBc CDMA modulation; VCC =3.0V. POUT <+6dBm and PIN <-13dBm, at all VGC. VCC =2.8V, VGC =2.0V, T=25C
W-CDMA ACP<-46dBc W-CDMA modulation; POUT <+5dBm and PIN <-12dBm W-CDMA modulation; Over entire gain control range, PIN <-17dBm W-CDMA modulation; VGC =1.0V, PIN <-14dBm
4-450
Rev A2 060907
RF2381
Parameter
Power Supply
Supply Voltage Gain Control Voltage (VGC) Supply Current 2.8 2.7 to 3.3 0 to 2.2 35 50 21 -2.0 +2.4 V V V mA mA mA mA
Specification Min. Typ. Max.
Unit
Condition
T=25C Specifications Operating range VCC =2.8V, VGC =2.2V VCC =3.3V, VGC =2.2V VCC =2.8V, VGC =0.4V VGC =0.4V to 2.2V
VGC Current
Rev A2 060907
4-451
RF2381
Pin 1 2 3 Function RF OUT GND GC Description
RF output pin. This pin is DC-coupled and requires VCC through a bias inductor sized accordingly to provide a high pass transformation with a series capacitor. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Analog gain control pin. This pin controls the gain of the IC. Minimum gain occurs at VGC <0.4V and maximum gain is achieved with VGC =2.0V. 50dB of linear gain control with little variation of input P1dB is available. RF input pin. This pin is DC-coupled. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Power supply. This pin should be connected to a regulated supply and requires a series inductor and bypass capacitor. Voltage is supplied through this pin to the first stage collector; this voltage also controls the bias. Gain may be tuned by adjusting the value of the feed inductor.
Interface Schematic
4 5 6
RF IN GND VCC
Application Schematic 1850MHz to 1910MHz
100 pF RF IN 4 5 2.7 nH VCC 33 nF 33 pF Note orientation of package in this schematic. 6 1 ATT ATT 3 2
33 nF GC
1 pF RF OUT 2.7 nH* VCC *For W-CDMA, use 2.2 nH
4-452
Rev A2 060907
RF2381
Evaluation Board Schematic
P1 P1-1 1 2 P1-3 P1-4 3 4 5 C1 100 pF 4 L2 2.7 nH VCC C3 33 nF C2 33 pF
2381401-
GC GND VCC
GND C4 33 nF 3 ATT ATT 2 1 L3 2.7 nH VCC C5 33 pF C6 33 nF C7 1 F C8 1 pF GC
J1 RF IN
50 strip
5 6
50 strip
J2 RF OUT
Note orientation of package in this schematic.
Rev A2 060907
4-453
RF2381
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.028", Board Material FR-4, Multi-Layer
4-454
Rev A2 060907
RF2381
TDMA ACP versus POUT over Temperature,
-25 +25C -30C -27 +85C -45 Note: Below POUT=-35 dBm, test equipment noise floor inhibits accurate AltCP measurement PIN=-9 dBm, f=1880 MHz, VCC=2.8 V -40
TDMA AltCP versus POUT over Temperature,
PIN=-9 dBm, f=1880 MHz, VCC=2.8 V +25C -30C +85C
-29
-50
-31
AltCP (dBc)
-50 -40 -30 -20 -10 0 10 20
ACP (dBc)
-55
-33
-60
-35
-65
-37
-70 -50 -40 -30 -20 -10 0 10 20
POUT (dBm)
POUT (dBm)
45.00 40.00 35.00 30.00
Supply Current versus Gain-Control Voltage over Temperature, PIN=-9 dBm, F=1880 MHz, VCC=2.8 V
Icc,mA, +25C Icc,mA, -30C Icc,mA, +85C
Gain versus Gain-Control Voltage over Temperature,
PIN=-9 dBm, F-1880 MHz, VCC=2.8 V 30.00 +25C 20.00 -30C +85C
10.00
0.00 25.00 20.00 15.00 10.00 5.00 0.00 0.00 -30.00
Gain (dB)
0.50 1.00 1.50 2.00 2.50
ICC (mA)
-10.00
-20.00
-40.00
-50.00 0.00
0.50
1.00
1.50
2.00
2.50
VGC (V)
VGC (V)
-35
W-CDMA ACPR versus VGC at Various Output Powers
Pout=+2dBm Note: Below VGC=~1.1V, test equipment noise floor inhibits accurate ACP measurement Pout=+3dBm Pout=+4dBm Pout=+6dBm Pout=+8dBm
60.0
NF versus VGC (RF Freq. 1950MHz, VCC=2.8V, VGC=2.0 to 0.2V)
-40
50.0
NF [dB]
40.0
ACPR (dBc)
-45
NF (dB)
-50 -55 -60 0.8 1 1.2 1.4 1.6 1.8 2
30.0
20.0
10.0
0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VGC (V)
VGC (V)
Rev A2 060907
4-455
RF2381
18.0
Output Power versus Input Power (RF Freq. 1950MHz, VCC=2.8V, VGC=2.0V)
16.0
Pout [dBm]
14.0
Output Power (dBm)
12.0
10.0
8.0
6.0
4.0 -14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
Input Power (dBm)
4-456
Rev A2 060907


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